We are looking for a graduate student for: Fully Funded EPSRC and Swansea PhD Scholarship in Electronic and Electrical Engineering:
Investigation of the Novel Boron Arsenide Wonder Material at Semiconductor Device Level.
Faculty Personal Web-Page.
Pioneered introduction of III-V MOSFETs for digital applications.
Developed parallel 3D finite element Schrödinger Equation quantum corrected drift-diffusion and Monte Carlo simulation toolboxes.
Studying a performance of nanoscale multi-gate transistors for future technology nodes (sub-10 nm technology nodes).
Simulating nanoscale transistor variability induced by materials and fabrication process using the 3D Monte Carlo and drift-diffusion toolboxes.
I coordinated simulation activities in the project "III-V MOSFETs for Ultimate CMOS" and in EU FP7 No. 1 STREP grant DUALLOGIC investigating nanoscale III-V MOSFETs.
I have more than 250 publications including 103 papers in journals like Nano Letters, IEEE T-ED, IEEE TNano, IEEE EDL, IEEE Access, IEEE J-EDS, and IEEE Microwave Theory Tech.; J. Appl. Phys.; Appl. Phys. Lett.; Phys. Rev. B and E; ACS Appl. Mater. & Interfaces, and Semicond. Sci. Technol, 20 invited talks.
I served in the programme committee of IEEE Nano 2009, 2011 ULIS 2010, IWCE 2015 and EDISON 2015 conferences, Programme Chair of IWCN 2017.
Jointly leading Nanoelectronic Devices Computational Group (NanoDeCo).